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NVH4L040N65S3F Datasheet(PDF) 5 Page - ON Semiconductor

No. de pieza NVH4L040N65S3F
Descripción Electrónicos  MOSFET ??Single N-Channel, SUPERFET III, FRFET
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
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NVH4L040N65S3F Datasheet(HTML) 5 Page - ON Semiconductor

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NVH4L040N65S3F
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TYPICAL CHARACTERISTICS
Figure 13. RDS(ON) vs. Gate Voltage
Figure 14. Normalized Gate Threshold Voltage
vs. Temperature
VGS, GATE−TO−SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
10
9
8
7
6
5
4
0
20
60
80
120
140
160
200
160
120
80
40
0
−40
−80
0.6
0.8
1.0
1.2
t, RECTANGULAR PULSE DURATION (s)
1
0.1
0.01
0.001
0.0001
0.00001
0.001
0.01
0.1
1
10
VGS = VDS
ID = 2.1 mA
TA = 150°C
TA = 25°C
40
100
180
Single Pulse
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
ZqJC(t) = r(t) x RqJC
RqJC = 0.28°C/W
Peak TJ = PDM x ZqJC(t) + TC
Duty Cycle, D = t1 / t2
Pulse Duration = 250 ms
Duty Cycle = 0.5% Max
ID = 32.5 A
Figure 15. Unclamped Inductive Switching
Capability
Figure 16. Transient Thermal Response Curve
tAV, TIME IN AVALANCHE (ms)
100
10
1
0.1
0.01
0.001
1
10
100
Starting TJ = 25°C
Starting TJ = 125°C


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