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FTK6N70P Datasheet(PDF) 2 Page - First Silicon Co., Ltd |
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FTK6N70P Datasheet(HTML) 2 Page - First Silicon Co., Ltd |
2 / 7 page Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25˚C, unless otherwise specified) PARAMET SYMBOL RATINGS UNIT Drain-Source Voltage 700 V VDSS Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 6.0 A TC = 25°C 6.0 A Continuous Drain Current TC = 100°C ID 3.79 Pulsed Drain Current (Note 2) IDM 24 A Single Pulse (Note 3) EAS 463 mJ Avalanche Energy Peak Diode Recovery dv/dt (Note 4) V/ns TC = 25°C 45/45/31/62.5 W Derate above 25°C PD 0.36/0.36/0.25/0.5 W / ˚C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2013. 01. 03 2/7 FTK6N70P/F/D/I Revision No : 0 Junction Temperature TJ +150 ˚C Storage Temperature TSTG -55 ~ +150 ˚C Operating Temperature TOPR -55 ~ +150 ˚C Total Power Dissipation (TO-251/252/TO-220F/220) ELECTRICAL CHARACTERISTICS (TC =25˚C, unless Otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP UNIT OFF CHARACTERISTICS 700 V Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA VDS = 700V, VGS = 0V 10 µ A Drain-Source Leakage Current IDSS Forward VGS = 30V, VDS = 0V 100 nA Gate-Source Leakage Current Reverse IGSS VGS = -30V, VDS = 0V -100 nA Breakdown Voltage Temperature Coefficient ΔBVDSS / ΔTJ ID = 250µA, Referenced to 25°C 0.6 V / ˚C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250µA 2.0 4.0 V Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 3.0A 1.7 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS 898 pF Output Capacitance COSS 95 pF Reverse Transfer Capacitance CRSS VDS = 25V, VGS = 0V, f = 1.0MHz 2.9 pF MAX SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDD = 350V, ID=6.0A, RG= 25Ω (Note 4,5) ns Turn-On Rise Time tR 37.87 ns Turn-Off Fall Time tF 29.67 ns Total Gate Charge QG 16.53 nC Gate-Source Charge QGS VDS = 560V,ID = 6.0A, VGS =10V (Note 4,5) 4.82 nC Turn-Off Delay Time Gate-Drain Charge QGD 5.70 nC tD(OFF) Forward Transconductance gFS VDS = 50V, ID = 3.0A (Note 4) 1.9 S 24.73 49.33 ns 1.35 |
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