TT8K1 datasheet(4/8 Pages) VBSEMI

No. de pieza	TT8K1

Descripción Electrónicos	Dual N-Channel 20 V (D-S) MOSFET

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Fabricante Electrónico	VBSEMI [VBsemi Electronics Co.,Ltd]

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TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.1

1

10

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

TJ = 25 °C

TJ = 150 °C

VSD - Source-to-Drain Voltage (V)

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

1.9

- 50

- 25

0

25

50

75

100

125

150

ID = 250 μA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power (Junction-to-Ambient)

0.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

02

4

6

8

10

TJ =25 °C

ID =3.4 A

TJ = 125 °C

VGS - Gate-to-Source Voltage (V)

0

1

2

3

4

5

6

0.01

0.1

1

10

100

1000

Time (s)

Safe Operating Area, Junction-to-Ambient

100

1

0.1

1

10

100

0.01

10

0.1

TA = 25 °C

Single Pulse

Limited by RDS(on)*

BVDSS Limited

1ms

100 μs

10 ms

VDS - Drain-to-Source Voltage (V)

*V GS > minimum VGS at which RDS(on) is specified

DC

1s,10s

100 ms

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TT8K1

4

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