TT8K2 datasheet(3/8 Pages) VBSEMI

No. de pieza	TT8K2

Descripción Electrónicos	Dual N-Channel 20 V (D-S) MOSFET

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Fabricante Electrónico	VBSEMI [VBsemi Electronics Co.,Ltd]

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TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

3

6

9

12

15

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS =10Vthru4V

VGS =3V

VGS =2V

VDS - Drain-to-Source Voltage (V)

0.00

0.012

0.017

0.020

0.05

0.10

0

3

6

9

12

15

VGS =

2 .5 V

VGS =

4.5 V

ID - Drain Current (A)

0

2

4

6

8

10

012

34

VDS =24V

ID =3.4 A

VDS =7.5 V

VDS =15V

Qg - Total Gate Charge (nC)

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

1

2

3

4

5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

TC = 25 °C

TC = 125 °C

TC = - 55 °C

VGS - Gate-to-Source Voltage (V)

Crss

0

50

100

150

200

250

300

0

5

10

15

20

25

30

Ciss

Coss

VDS - Drain-to-Source Voltage (V)

0.6

0.8

1.0

1.2

1.4

1.6

1.8

- 50

- 25

0

25

50

75

100

125

150

ID =3.4 A

VGS =10V, VGS =4.5 V

TJ - Junction Temperature (°C)

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TT8K2

3

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