2SD1199 datasheet(1/2 Pages) PANASONIC

No. de pieza	2SD1199

Descripción Electrónicos	Silicon NPN epitaxial planer type(For low-frequency amplification)

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Fabricante Electrónico	PANASONIC [Panasonic Semiconductor]

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1

Transistor

2SD1199

Silicon NPN epitaxial planer type

For low-frequency amplification

s Features

q

High foward current transfer ratio hFE.

q

Low collector to emitter saturation voltage VCE(sat).

q

High emitter to base voltage VEBO.

q

Low noise voltage NV.

q

M type package allowing easy automatic and manual insertion as

well as stand-alone fixing to the printed circuit board.

s Absolute Maximum Ratings (Ta=25˚C)

Unit: mm

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature

1:Base

2:Collector

EIAJ:SC–71

3:Emitter

M Type Mold Package

6.9

±0.1

0.55

±0.1

0.45

±0.05

2.5

±0.1

1.0

1.5

1.5 R0.9

R0.9

0.85

2.5

1

2

3

Symbol

VCBO

VCEO

VEBO

ICP

IC

PC

Tj

Tstg

Ratings

50

40

15

100

50

400

150

–55 ~ +150

Unit

V

mA

mW

˚C

s Electrical Characteristics (Ta=25˚C)

Parameter

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Transition frequency

Noise voltage

Symbol

ICBO

ICEO

VCBO

VCEO

VEBO

hFE

*

VCE(sat)

fT

NV

Conditions

VCB = 20V, IE = 0

VCE = 20V, IB = 0

IC = 10µA, IE = 0

IC = 1mA, IB = 0

IE = 10µA, IC = 0

VCE = 10V, IC = 2mA

IC = 10mA, IB = 1mA

VCB = 10V, IE = –2mA, f = 200MHz

VCE = 10V, IC = 1mA, GV = 80dB

Rg = 100kΩ, Function = FLAT

min

50

40

15

400

typ

0.05

120

80

max

100

1

2000

0.2

Unit

nA

µA

V

MHz

mV

*h

FE Rank classification

Rank

R

S

T

hFE

400 ~ 800

600 ~ 1200 1000 ~ 2000

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2SD1199 Datasheet(PDF) 1 Page - Panasonic Semiconductor

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