TPS2064DGNRG4 datasheet(3/21 Pages) TI

No. de pieza	TPS2064DGNRG4

Descripción Electrónicos	CURRENT-LIMITED, POWER-DISTRIBUTION SWITCHES

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Fabricante Electrónico	TI [Texas Instruments]

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ELECTRICAL CHARACTERISTICS

TPS2060

TPS2064

SLVS553A – MARCH 2005 – REVISED JULY 2005

over recommended operating junction temperature range, V

I(IN) = 5.5 V, IO = 1 A, VI(/ENx) = 0 V, or VI(ENx) = 5.5 V (unless

otherwise noted)

PARAMETER

TEST CONDITIONS(1)

MIN

TYP

MAX

UNIT

POWER SWITCH

Static drain-source on-state resist-

VI(IN) = 5 V or

ance, 5-V operation and 3.3-V op-

IO = 1.5 A

0

°C < T

J < 105°C

70

115

m

Ω

3.3 V,

eration

rDS(on)

Static drain-source on-state resist-

ance, 2.7-V

VI(IN) = 2.7 V,

IO = 1.5 A

0

°C < T

J < 105°C

75

125

m

Ω

operation(2)

VI(IN) = 5.5 V

0.6

1.5

tr(2)

Rise time, output

VI(IN) = 2.7 V

0.4

1

CL = 1 µF,

TJ = 25°C

ms

RL = 5 Ω

VI(IN) = 5.5 V

0.05

0.5

tf(2)

Fall time, output

VI(IN) = 2.7 V

0.05

0.5

ENABLE INPUT EN OR EN

VIH

High-level input voltage

2.7 V < VI(IN) < 5.5 V

2

V

VIL

Low-level input voltage

2.7 V < VI(IN) < 5.5 V

0.8

II

Input current

VI(/ENx) = 0 V or 5.5 V, VI(ENx) = 0 V or 5.5 V

-0.5

0.5

µA

ton(3)

Turnon time

CL = 100 µF, RL = 5 Ω

3

ms

toff(3)

Turnoff time

CL = 100 µF, RL = 5 Ω

10

CURRENT LIMIT

VI(IN) = 5 V, OUT connected to GND, device enabled into

IOS

Short-circuit output current

1.6

2.1

2.6

short-circuit

A

IOC_TRIP(3)

Over-current trip threshold

VI(IN) = 5 V, Current ramp (≤ 100 A/s) on OUT

3.2

3.9

TJ = 25°C

0.5

1

No load on OUT, VI(/ENx) = 5.5 V,

Supply current, low-level output

µA

or VI(ENx) = 0 V

0

°C < T

J < 105°C

0.5

5

TJ = 25°C

50

70

No load on OUT, VI(/ENx) = 0 V,

Supply current, high-level output

µA

or VI(ENx) = 5.5 V

0

°C < T

J < 105°C

50

90

OUT connected to ground,

Leakage current

VI(/ENx) = 5.5 V,

0

°C < T

J < 105°C

1

µA

or VI(ENx) = 0 V

Reverse leakage current

VI(OUTx) = 5.5 V, IN = ground(3)

TJ = 25°C

0.2

µA

UNDERVOLTAGE LOCKOUT

Low-level input voltage, IN

2

2.5

V

Hysteresis, IN

TJ = 25°C

75

mV

OVERCURRENT OC1 and OC2

Output low voltage, VOL(OCx)

IO(/OCx) = 5 mA

0.4

V

Off-state current(3)

VO(/OCx) = 5 V or 3.3 V

1

µA

OC deglitch(3)

OCx assertion or deassertion

4

8

15

ms

THERMAL SHUTDOWN(4)

Thermal shutdown threshold(3)

135

°C

Recovery from thermal shutdown(3)

125

°C

Hysteresis(3)

10

°C

(1)

Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account

separately.

(2)

Not tested in production, specified by design.

(3)

Not tested in production, specified by design.

(4)

The thermal shutdown only reacts under overcurrent conditions.

3

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