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LMV1031URX-20 Datasheet(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
No. de pieza LMV1031URX-20
Descripción Electrónicos  Amplifier for Internal 3-Wire Analog Microphones and External Preamplifier
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Fabricante Electrónico  NSC [National Semiconductor (TI)]
Página de inicio  http://www.national.com
Logo NSC - National Semiconductor (TI)

LMV1031URX-20 Datasheet(HTML) 2 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
ESD Tolerance (Note 2)
Human Body Model
2500V
Machine Model
250V
Supply Voltage
V
DD - GND
5.5V
Storage Temperature Range
−65˚C to 150˚C
Junction Temperature (Note 6)
150˚C max
Mounting Temperature
Infrared or Convection (20 sec.)
235˚C
Operating Ratings (Note 1)
Supply Voltage
2V to 5V
Temperature Range
−40˚C to +85˚C
2V and 5V Electrical Characteristics (Note 3)
Unless otherwise specified, all limits are guaranteed for T
J = 25˚C and VDD = 2V and 5V. Boldface limits apply at the tempera-
ture extremes.
Symbol
Parameter
Conditions
Min
(Note 4)
Typ
(Note 5)
Max
(Note 4)
Units
I
DD
Supply Current
V
IN = GND
72
90
100
µA
SNR
Signal to Noise Ratio
f = 1 kHz, V
IN =18mVPP
62
dB
THD
Total Harmonic Distortion
f = 1 kHz, V
IN =18mVPP
0.18
%
e
n
Output Noise
A-Weighted
−86
dBV
A
V
Gain
f = 1 kHz, V
IN =18mVPP
19.18
19.00
20.1
20.90
21.00
dB
f
LOW
Lower −3 dB Roll Off Frequency
R
SOURCE =50
Ω,V
IN =18mVPP
72
Hz
f
HIGH
Upper −3 dB Roll Off Frequency
R
SOURCE =50
Ω,V
IN =18mVPP
52
kHz
V
IN
Max Input Signal
f = 1 kHz and THD+N < 1%
108
mV
PP
Z
IN
Input Impedance
>100
M
C
IN
Input Capacitance
2pF
V
OUT
Output Voltage
V
IN = GND
890
875
1090
1310
1325
mV
R
O
Output Impedance
f=1kHz
<200
PSRR
Power Supply Rejection Ratio
2V < V
DD < 5V
56
dB
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics.
Note 2: The human body model (HBM) is 1.5 k
Ω in series with 100 pF. The machine model is 0Ω in series with 200 pF.
Note 3: Electrical table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of
the device such that TJ =TA. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA.
Note 4: All limits are guaranteed by design or statistical analysis.
Note 5: Typical values represent the most likely parametric norm at the time of characterization.
Note 6: The maximum power dissipation is a function of TJ(MAX) , θJA and TA. The maximum allowable power dissipation at any ambient temperature is PD =
(TJ(MAX) -TA)/θJA. All numbers apply for packages soldered directly onto a PC board.
www.national.com
2


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