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2SD1993 Datasheet(Hoja de datos) 1 Page - Panasonic Semiconductor

No. de Pieza. 2SD1993
Descripción  Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)
Descarga  2 Pages
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Fabricante  PANASONIC [Panasonic Semiconductor]
Página de inicio  http://www.panasonic.com/industrial/
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1
Transistor
Rank
R
S
T
hFE
210 ~ 340
290 ~ 460
360 ~ 650
2SD1993
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
s Features
q
Low noise voltage NV.
q
High foward current transfer ratio hFE.
q
Allowing supply with the radial taping.
s Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
MT1 Type Package
6.9
±0.1
1.05
±0.05
2.5
±0.1
(1.45)
0.8
0.7
4.0
0.65 max.
0.45
+0.1
–0.05
2.5
±0.5 2.5±0.5
123
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
55
55
7
200
100
400
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Noise voltage
Symbol
ICBO
ICEO
VCBO
VCEO
VEBO
hFE
*
VCE(sat)
fT
NV
Conditions
VCB = 20V, IE = 0
VCE = 20V, IB = 0
IC = 10µA, IE = 0
IC = 2mA, IB = 0
IE = 10µA, IC = 0
VCE = 10V, IC = 2mA
IC = 100mA, IB = 10mA
VCB = 10V, IE = –2mA, f = 200MHz
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
min
55
55
7
210
typ
200
max
100
1
650
1.0
150
Unit
nA
µA
V
V
V
V
MHz
mV
*h
FE Rank classification
1.2
±0.1
0.65
max.
0.45 0.1
0.05
+
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
(HW type)




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