SDU30N03L datasheet(2/5 Pages) SAMHOP

No. de pieza	SDU30N03L

Descripción Electrónicos	N-Channel Logic Level Enhancement Mode Field Effect Transistor

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Fabricante Electrónico	SAMHOP [SamHop Microelectronics Corp.]

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SDU/D30N03L

ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)

Parameter

Symbol

Condition

Min Typ Max Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS = 0V, ID = 250uA

30

V

Zero Gate Voltage Drain Current

IDSS

VDS = 24V, VGS = 0V

10

Gate-Body Leakage

IGSS

VGS = +/-20V, VDS = 0V

nA

ON CHARACTERISTICS

a

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250uA

1

1.5

11.5

17

3

V

Drain-Source On-State Resistance

RDS(ON)

VGS = 10V, ID =15A

VGS = 4.5V, ID = 12A

14

21

On-State Drain Current

ID(ON)

VDS = 10V, VGS = 10V

40

30

A

S

Forward Transconductance

FS

g

VDS = 10V, ID = 20A

DYNAMIC CHARACTERISTICS

b

Input Capacitance

CISS

CRSS

COSS

Output Capacitance

Reverse Transfer Capacitance

VDD =15V, VGS = 0V

f = 1.0MHZ

P

F

P

F

P

F

SWITCHING CHARACTERISTICS

b

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

tD(ON)

tr

tD(OFF)

tf

Fall time

VDD = 15V,

ID =1A,

VGS = 10V,

RGEN = 6

ns

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Qg

Qgs

Qgd

VDS = 15V, ID = 15A,

VGS =10V

nC

2

34.4

5.1

7.7

1200

530

150

5

65

67

90

m ohm

ohm

+/-100

uA

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SDU30N03L Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

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