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IRFE330 Datasheet(PDF) 2 Page - International Rectifier |
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IRFE330 Datasheet(HTML) 2 Page - International Rectifier |
2 / 8 page IRFE330, JANTX-, JANTXV-, 2N6800U Device 2 www.irf.com Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 400 — — V VGS =0 V, ID = 1.0mA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown — 0.35 — V/°C Reference to 25°C, ID = 1.0mA Voltage RDS(on) Static Drain-to-Source — — 1.0 VGS = 10V, ID = 2.0A On-State Resistance — — 1.15 Ω VGS = 10V, ID = 3.0A VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 2.4 — — S ( )VDS > 15V, IDS = 2.0A IDSS Zero Gate Voltage Drain Current — — 25 VDS= 0.8 x Max Rating,VGS=0V — — 250 VDS = 0.8 x Max Rating VGS = 0V, TJ = 125°C IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20 V IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V Qg Total Gate Charge — — 33 VGS = 10V, ID = 3.0A Qgs Gate-to-Source Charge — — 5.8 nC VDS = Max Rating x 0.5 Qgd Gate-to-Drain (‘Miller’) Charge — — 17 td(on) Turn-On Delay Time — — 30 VDD = 200V, ID = 3.0A, tr Rise Time — — 35 RG = 7.5Ω td(off) Turn-Off Delay Time — — 55 tf Fall Time — — 35 LD Internal Drain Inductance — 1.8 — LS Internal Source Inductance — 4.3 — Ciss Input Capacitance — 660 — VGS = 0V, VDS = 25 V Coss Output Capacitance — 190 — pF f = 1.0MHz Crss Reverse Transfer Capacitance — 68 — Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) — — 3.0 ISM Pulse Source Current (Body Diode) —— 12 VSD Diode Forward Voltage — — 1.4 V Tj = 25°C, IS = 3.0A, VGS = 0V trr Reverse Recovery Time — — 700 ns Tj = 25°C, IF = 3.0A, di/dt ≤ 100A/µs QRR Reverse Recovery Charge — — 6.2 µC VDD ≤ 50V ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. A Modified MOSFET symbol showing the integral reverse p-n junction rectifier. nA nH ns Measured from drain pad to die. Measured from center of source pad to the end of source bonding wire. Modified MOSFET symbol show- ing the internal inductances. µA Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction-to-Case — — 5.0 K/W RthJPCB Junction-to-PC Board — — 19 Soldered to a copper clad PC board Details of notes through
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