IRFE330, JANTX-, JANTXV-, 2N6800U Device

2

www.irf.com

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

400

—

—

V

VGS =0 V, ID = 1.0mA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown

—

0.35

—

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source

—

—

1.0

VGS = 10V, ID = 2.0A

On-State Resistance

—

—

1.15

Ω

VGS = 10V, ID = 3.0A

VGS(th)

Gate Threshold Voltage

2.0

—

4.0

V

VDS = VGS, ID = 250µA

gfs

Forward Transconductance

2.4

—

—

S ( )VDS > 15V, IDS = 2.0A 

IDSS

Zero Gate Voltage Drain Current

—

—

25

VDS= 0.8 x Max Rating,VGS=0V

—

—

250

VDS = 0.8 x Max Rating

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

—

—

100

VGS = 20 V

IGSS

Gate-to-Source Leakage Reverse

—

—

-100

VGS = -20V

Qg

Total Gate Charge

—

—

33

VGS = 10V, ID = 3.0A

Qgs

Gate-to-Source Charge

—

—

5.8

nC

VDS = Max Rating x 0.5

Qgd

Gate-to-Drain (‘Miller’) Charge

—

—

17

Turn-On Delay Time

—

—

30

VDD = 200V, ID = 3.0A,

tr

Rise Time

—

—

35

RG = 7.5Ω

Turn-Off Delay Time

—

—

55

tf

Fall Time

—

—

35

LD

Internal Drain Inductance

—

1.8

—

LS

Internal Source Inductance

—

4.3

—

Ciss

Input Capacitance

—

660

—

VGS = 0V, VDS = 25 V

Coss

Output Capacitance

—

190

—

pF

f = 1.0MHz

Crss

Reverse Transfer Capacitance

—

68

—

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

IS

Continuous Source Current (Body Diode)

—

—

3.0

ISM

Pulse Source Current (Body Diode) Œ

——

12

VSD

Diode Forward Voltage

—

—

1.4

V

trr

Reverse Recovery Time

—

—

700

ns

Tj = 25°C, IF = 3.0A, di/dt ≤ 100A/µs

QRR

Reverse Recovery Charge

—

—

6.2

µC

VDD ≤ 50V 

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A

Modified MOSFET symbol

showing the integral reverse

p-n junction rectifier.

nA



nH

ns

Measured from drain pad to

die.

Measured from center of

source pad to the end of

source bonding wire.

Modified MOSFET symbol show-

ing the internal inductances.

µA

Thermal Resistance

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction-to-Case

—

—

5.0

K/W 

RthJPCB

Junction-to-PC Board

—

—

19

Soldered to a copper clad PC board

Details of notes

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