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TD62002APG Datasheet(PDF) 3 Page - Toshiba Semiconductor

No. de pieza TD62002APG
Descripción Electrónicos  TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TD62002APG Datasheet(HTML) 3 Page - Toshiba Semiconductor

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TD62001~004APG/AFG
2002-12-11
3
Recommended Operating Conditions (Ta = −40°C to 85°C)
Characteristics
Symbol
Condition
Min
Typ.
Max
Unit
Output sustaining voltage
VCE (SUS)
0
―
50
V
Duty = 10%
0
―
370
APG
Duty = 50%
0
―
130
Duty = 10%
0
―
233
Output current
AFG
IOUT
Tpw = 25 ms
7 circuits
Ta = 85°C
Tj = 120°C
Duty = 50%
0
―
70
mA/ch
Input voltage
Except
TD62001APG/
AFG
VIN
0
―
24
V
TD62002
14.5
―
24
TD62003
2.8
―
24
Input voltage (output on)
TD62004
VIN (ON)
IOUT = 400 mA
hFE = 800
6.2
―
24
V
TD62001
0
―
0.6
TD62002
0
―
7.4
TD62003
0
―
0.7
Input voltage (output off)
TD62004
VIN (OFF)
0
―
1.0
V
Input current
Only TD62001
IIN
0
―
10
mA
Clamp diode reverse voltage
VR
―
―
50
V
Clamp diode forward current
IF
―
―
350
mA
APG
Ta = 85°C
―
―
0.76
Power dissipation
AFG
PD
Ta = 85°C
(Note)
―
―
0.325
W
Note: When mounted on a glass-epoxy PCB (30 mm
´ 30 mm ´ 1.6 mm, Cu area: 50%)


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