Philips Semiconductors

BUK75/76/7E11-55B

TrenchMOS™ standard level FET

Product data

Rev. 02 — 11 November 2003

8 of 16

9397 750 12053

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

Fig 9.

Gate-source threshold voltage as a function of

junction temperature.

Fig 10. Sub-threshold drain current as a function of

gate-source voltage.

Fig 11. Forward transconductance as a function of

drain current; typical values.

Fig 12. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values.

03aa32

0

1

2

3

4

5

-60

0

60

120

180

Tj (°C)

VGS(th)

(V)

max

min

typ

03aa35

10-6

10-5

10-4

10-3

10-2

10-1

02

46

VGS (V)

ID

(A)

max

typ

min

03nn38

0

10

20

30

40

0

25

50

75

100

ID (A)

gfs

(S)

03nn43

0

1000

2000

3000

10-2

10-1

1

10

102

VDS (V)

C

(pF)

Ciss

Coss

Crss