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MX29LV040C Datasheet(Hoja de datos) 1 Page - Macronix International

No. de Pieza. MX29LV040C
Descripción  4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY
Descarga  52 Pages
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Fabricante  MCNIX [Macronix International]
Página de inicio  http://www.macronix.com
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1
P/N:PM1149
REV. 1.3, APR. 24, 2006
MX29LV040C
4M-BIT[512Kx8]CMOSSINGLEVOLTAGE
3VONLYEQUALSECTORFLASHMEMORY
then resumes the erase
• Status Reply
- Data# Polling & Toggle bit for detection of program
and erase operation completion
• Sector protection
- Hardware method to disable any combination of
sectors from program or erase operations
- Any combination of sectors can be erased with erase
suspend/resume function
• CFI (Common Flash Interface) compliant
- Flash device parameters stored on the device and
provide the host system to access
• 100,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1V to VCC+1V
• Package type:
- 32-pin PLCC
- 32-pin TSOP
- All Pb-free devices are RoHS Compliant
• Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
• 20 years data retention
FEATURES
• Extended single - supply voltage range 2.7V to 3.6V
• 524,288 x 8 only
• Single power supply operation
- 3.0V only operation for read, erase and program
operation
• Fully compatible with MX29LV040 device
• Fast access time: 55R/70/90ns
• Low power consumption
- 30mA maximum active current
- 0.2uA typical standby current
• Command register architecture
- 8 equal sector of 64K-Byte each
- Byte Programming (9us typical)
- Sector Erase (Sector structure 64K-Byte x8)
• Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors with
Erase Suspend capability
- Automatically program and verify data at specified
address
• Erase suspend/Erase Resume
- Suspends sector erase operation to read data from,
or program data to, any sector that is not being erased,
GENERAL DESCRIPTION
The MX29LV040C is a 4-mega bit Flash memory orga-
nized as 512K bytes of 8 bits. MXIC's Flash memories
offer the most cost-effective and reliable read/write non-
volatile random access memory. The MX29LV040C is
packaged in 32-pin PLCC and TSOP. It is designed to
be reprogrammed and erased in system or in standard
EPROM programmers.
The standard MX29LV040C offers access time as fast
as 55ns, allowing operation of high-speed microproces-
sors without wait states. To eliminate bus contention,
the MX29LV040C has separate chip enable (CE#) and
output enable (OE#) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29LV040C uses a command register to manage this
functionality. The command register allows for 100%
TTL level control inputs and fixed power supply levels
during erase and programming, while maintaining maxi-
mum EPROM compatibility.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and program operations produces reliable cy-
cling. The MX29LV040C uses a 2.7V~3.6V VCC supply
to perform the High Reliability Erase and auto Program/
Erase algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamperes on
address and data pin from -1V to VCC + 1V.




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