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H01N60I Datasheet(Hoja de datos) 2 Page - Hi-Sincerity Mocroelectronics

No. de Pieza. H01N60I
Descripción  N-Channel Power Field Effect Transistor
Descarga  5 Pages
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Fabricante  HSMC [Hi-Sincerity Mocroelectronics]
Página de inicio  http://www.hsmc.com.tw
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200502
Issued Date : 2005.03.01
Revised Date : 2005.09.28
Page No. : 2/5
H01N60I, H01N60J
HSMC Product Specification
Thermal Characteristics
Symbol
Parameter
Value
Units
RθJC
Thermal Resistance Junction to Case Max.
4.5
°C/W
RθJA
Thermal Resistance Junction to Ambient Max.
110
°C/W
ELectrical Characteristics (T
J=25°C, unless otherwise specified)
Symbol
Characteristic
Min.
Typ.
Max.
Unit
• Off Characteristics
V
DSS
Drain-Source Breakdown Voltage (V
GS=0V, ID=250uA)
600
-
-
V
∆BV
DSS/∆TJ
Breakdown Voltage Temperature Coefficient (I
D=250uA, Referenced
to 25
oC)
-0.6
-
V/
oC
Zero Gate Voltage Drain Current (V
DS=600V, VGS=0V)
-
-
1
uA
I
DSS
Zero Gate Voltage Drain Current (V
DS=480V, Tj=125°C)
-
-
50
uA
I
GSSF
Gate-Body Leakage Current-Forward (V
GS=30V, VDS=0V)
-
-
100
nA
I
GSSR
Gate-Body Leakage Current-Reverse (V
GS=-30V, VDS=0V)
-
-
-100
nA
• On Characteristics
V
GS(th)
Gate Threshold Voltage (V
DS=VGS, ID=250uA)
2
-
4
V
R
DS(on)
Static Drain-Source On-Resistance (V
GS=10V, ID=0.6A)
*3
--
8
g
FS
Forward Transconductance (V
DS=40V, ID=0.5A)
*3
-0.75
-
S
• Dynamic Characteristics
C
iss
Input Capacitance
-
210
250
C
oss
Output Capacitance
-
19
25
C
rss
Reverse Transfer Capacitance
V
GS=0V, VDS=25V, f=1MHz
-4
8
pF
• Switching Characteristics
t
d(on)
Turn-on Delay Time
-
-
30
t
r
Turn-on Rise Time
-
-
60
t
d(off)
Turn-off Delay Time
-
-
45
t
f
Turn-off Fall Time
V
DD=300V, ID=1.1A
R
G=25Ω
*3
--
75
ns
Q
g
Total Gate Charge
-
15
20
Q
gs
Gate-Source Charge
-
4
-
Q
gd
Gate-Drain Charge
V
DS=480V, ID=1.1A
V
GS=10V
*3
-3
-
nC
• Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
-
-
1
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
-
-
4
A
V
SD
Drain-Source Diode Forward Voltage (V
GS=0V, IS=1A)
-
-
1.4
V
t
rr
Reverse Recovery Time (V
GS=0V, IS=1.1A, dlF/dt=100A/us)
*3
-
190
-
ns
Qrr
Reverse Recovery Charge (V
GS=0V, IS=1.1A, dlF/dt=100A/us)
*3
-0.53
-
nC
*3: Pulse Test: Pulse Width
≤300us, Duty Cycle≤2%




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