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STB180N55 Datasheet(PDF) 3 Page - STMicroelectronics |
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STB180N55 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 11 page STP180N55 - STB180N55 2 Electrical characteristics 3/11 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 3. On/off states Table 4. Dynamic Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-Source Breakdown Voltage ID = 250µA, VGS= 0 55 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating, VDS = Max Rating,Tc = 125°C 10 100 µA µA IGSS Gate Body Leakage Current (VDS = 0) VGS = ±20V ± 200 nA VGS(th) Gate Threshold Voltage VDS= VGS, ID = 250µA 24 V RDS(on) Static Drain-Source On Resistance VGS= 10V, ID= 60A D²PAK TO-220 3.5 3.8 m Ω m Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs Note 3 Forward Transconductance VDS =15V, ID = 60A TBD S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS =25V, f=1 MHz, VGS=0 6200 1800 100 pF pF pF Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=44V, ID = 120A VGS =10V (see Figure 2) 110 TBD TBD TBD nC nC nC |
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