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BAR65V-02V Datasheet(PDF) 2 Page - Vishay Siliconix |
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BAR65V-02V Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 4 page  Document Number 85644 Rev. 1, 23-Oct-02 www.vishay.com 2 VISHAY BAR65V-02V Vishay Semiconductors Typical Characteristics (Tamb = 25°C unless otherwise specified) Diode capacitance f = 1 MHz, VR = 0 CD 0.65 pF f = 1 MHz, VR = 1 V CD 0.55 0.9 pF f = 1 MHz, VR = 3 V CD 0.50 0.8 pF Forward resistance f = 100 MHz, IF = 1 mA rf 1 Ω f = 100 MHz, IF = 5 mA rf 0.6 0.95 Ω f = 100 MHz, IF = 10 mA rf 0.52 0.9 Ω Charge carrier life time IF = 10 mA, IR = 6 mA, iR = 3 mA trr 150 ns Parameter Test condition Sub type Symbol Min Typ. Max Unit Figure 1. Forward Resistance vs. Forward Current Figure 2. Diode Capacitance vs. Reverse Voltage 0.1 1.0 10.0 100.0 0.10 1.00 10.00 100.00 16898 IF – Forward Current ( mA ) f = 100 MHz 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 5 10 15 20 25 30 16899 VR – Reverse Voltage (V) f = 1 MHz |
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