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KSH44H11I Datasheet(PDF) 1 Page - Fairchild Semiconductor

No. de pieza KSH44H11I
Descripción Electrónicos  General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications
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Fabricante Electrónico  FAIRCHILD [Fairchild Semiconductor]
Página de inicio  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

KSH44H11I Datasheet(HTML) 1 Page - Fairchild Semiconductor

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©2002 Fairchild Semiconductor Corporation
Rev. A3, October 2002
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
* Pulse Test: PW
≤300µs, Duty Cycle≤2%
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current (DC)
8
A
ICP
Collector-Current (Pulse)
16
A
PC
Collector Dissipation (TC=25°C)
20
W
Collector Dissipation (Ta=25°C)
1.75
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
VCEO(sus)
* Collector-Emitter Sustaining Voltage
IC = 30mA, IB = 0
80
V
ICEO
Collector Cut-off Current
VCE = 80V, IB = 0
10
µA
IEBO
Emitter Cut-off Current
VBE = 5V, IC = 0
50
µA
hFE
DC Current Gain
VCE = 1V, IC = 2A
VCE = 1V, IC = 4A
60
40
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 8A, IB = 0.4A
1
V
VBE(on)
Base-Emitter On Voltage
IC = 8A, IB = 0.8A
1.5
V
fT
Current Gain Bandwidth Product
VCE = 10V, IC = 0.5A
50
MHz
Cob
Output Capacitance
VCB =10V, f = 1MHz
130
pF
tON
Turn On Time
IC = 5A
IB1 = - IB2 = 0.5A
300
ns
tSTG
Storage Time
500
ns
tF
Fall Time
140
ns
KSH44H11
General Purpose Power and Switching Such
as Output or Driver Stages in Applications
D-PAK for Surface Mount Applications
• Lead Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular KSE44H
• Fast Switching Speeds
• Low Collector Emitter Saturation Voltage
1.Base
2.Collector
3.Emitter
D-PAK
I-PAK
11


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