©2006 Fairchild Semiconductor Corporation

1

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FCH47N60F Rev. A1

February 2006

FCH47N60F

600V N-Channel MOSFET

Features

• 100% avalanche tested

Description

voltage MOSFET family that is utilizing an advanced charge

balance mechanism for outstanding low on-resistance and

lower gate charge performance.

This advanced technology has been tailored

to minimize

conduction loss, provide superior switching performance, and

withstand extreme dv/dt rate and higher avalanche energy.

Consequently, SuperFET is very suitable for various AC/DC

power conversion in switching mode operation for system

miniaturization and higher efficiency.

G

S

D

TO-247

D

G

S

Absolute Maximum Ratings

Symbol

Parameter

FCH47N60F

Unit

Drain-Source Voltage

600

V

Drain Current

47

29.7

A

A

Drain Current

- Pulsed

(Note 1)

141

A

Gate-Source voltage

± 30

V

Single Pulsed Avalanche Energy

(Note 2)

1800

mJ

Avalanche Current

(Note 1)

47

A

Repetitive Avalanche Energy

(Note 1)

41.7

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

Power Dissipation

- Derate above 25

°C

417

3.33

W

W/

°C

Operating and Storage Temperature Range

-55 to +150

°C

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

°C

Thermal Characteristics

Symbol

Parameter

Typ.

Max.

Unit

Thermal Resistance, Junction-to-Case

--

0.3

°C/W

Thermal Resistance, Case-to-Sink

0.24

--

°C/W

Thermal Resistance, Junction-to-Ambient

--

41.7

°C/W