FDC658AP Rev. B (W)

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4

Figure 7.

0

2

4

6

8

10

02468

10

-10V

-15V

Gate Charge Characteristics

Figure 8.

0

150

300

450

600

0

6

12

18

24

30

f = 1 MHz

Capacitance vs Drain to Source Voltage

Figure 9.

0.01

0.1

1

10

100

0.1

1

10

100

DC

1s

100ms

100us

SINGLE PULSE

10ms

1ms

Forward Bias Safe Operating Area

Figure 10.

0

2

4

6

8

10

0.01

0.1

1

10

100

t, PULSE WIDTH (s)

SINGLE PULSE

Single Pulse Maximum Power

Dissipation

Figure 11.

0.001

0.01

0.1

1

0.00001

0.0001

0.001

0.01

0.1

1

10

100

1000

t, RECTANGULAR PULSE DURATION

P(pk)

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D = 0.5

Transient Thermal Response Curve

Thermal characterization performed using the conditions described in Note 1b.

Transient thermal response will change depending on the circuit board design.

Typical Characteristics