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FDD8796 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDD8796 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 6 page FDD8796/FDU8796 Rev. B 2 www.fairchildsemi.com Electrical Characteristics T J = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 25 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, referenced to 25°C 7 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 20V VGS = 0V TJ = 150°C 1 µA 250 IGSS Gate to Source Leakage Current VGS = ±20V ±100 nA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.2 1.8 2.5 V ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C -6.7 mV/°C rDS(on) Drain to Source On Resistance VGS = 10V, ID = 35A 4.5 5.7 m Ω VGS = 4.5V, ID = 35A 6.0 8.0 VDS = 10V, ID = 35A TJ = 175°C 6.9 9.5 Dynamic Characteristics Ciss Input Capacitance VDS = 13V, VGS = 0V, f = 1MHz 1960 2610 pF Coss Output Capacitance 455 605 pF Crss Reverse Transfer Capacitance 315 475 pF RG Gate Resistance f = 1MHz 1.1 Ω Switching Characteristics td(on) Turn-On Delay Time VDD =13V, ID = 35A VGS = 10V, RGS = 20Ω 10 20 ns tr Rise Time 24 39 ns td(off) Turn-Off Delay Time 99 158 ns tf Fall Time 57 91 ns Qg Total Gate Charge VGS = 0 to10V VDD =13V, ID = 35A, Ig = 1.0mA 37 52 nC Qg Total Gate Charge VGS = 0 to 5V 19 27 nC Qgs Gate to Source Gate Charge 6 nC Qgd Gate to Drain Charge 6 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage VGS = 0V, IS = 35A 0.9 1.25 V VGS = 0V, IS = 15A 0.8 1.0 V trr Reverse Recovery Time IF = 35A, di/dt = 100A/µs 30 45 ns Qrr Reverse Recovery Charge IF = 35A, di/dt = 100A/µs 23 35 nC Notes: 1: Pulse time < 300 µs, Duty cycle = 2%. 2: Starting TJ = 25°C, L = 0.3mH, IAS = 24.7A, VDD = 23V, VGS = 10V. |
Número de pieza similar - FDD8796 |
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Descripción similar - FDD8796 |
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