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TPS65560RGTTG4 Datasheet(PDF) 4 Page - Texas Instruments

No. de pieza TPS65560RGTTG4
Descripción Electrónicos  INTEGRATED PHOTO FLASH CHARGER AND IGBT DRIVER
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Fabricante Electrónico  TI [Texas Instruments]
Página de inicio  http://www.ti.com
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TPS65560RGTTG4 Datasheet(HTML) 4 Page - Texas Instruments

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PIN ASSIGNMENT
PGND
PGND
CHG
XFULL
PowerPAD
SW
SW
VCC
F_ON
NC − No internal connection
16
15 14 13
5
6
7
8
1
2
3
4
12
11
10
9
TPS65560
SLVS608 – JANUARY 2006
RGT
(Top View)
TERMINAL FUNCTIONS
PIN NUMBER
SIGNAL
I/O
DESCRIPTION
1, 2
SW
O
Primary side switch. Connect SW to the switched side of the transformer
I
Power supply input. Connect VCC to an input supply from 2.7 V to 4 V. Bypass VCC to GND
3
VCC
with a 1-
µF ceramic capacitor as close as possible to the IC.
I
G_IGBT control input. Drives F_ON with the flash discharge signal. A logic high on F_ON
4
F_ON
drives G_IGBT high when CHG is Low. See the IGBT Driver Conrtol section for details.
5, 8, 13, 16
NC
No internal connection
I
Primary side peak current control input. The voltage at I_PEAK sets the peak current into
6
I_PEAK
SW. See the Programming Peak Current section for details on selecting V(I_PEAK).
7
G_IGBT
O
IGBT gate driver output. G_IGBT swings from PGND to VCC to drive external IGBT devices.
Charge completion indicator output. XFULL is an open-drain output that pulls low once the
output is fully charged. XFULL is high impedance during charging and all fault conditions.
9
XFULL
O
XFULL is reseted when CHG turns Low from High. See the Indicating Charging Status
section for details.
10
CHG
I
Charge control input. Drive CHG high to initiate charging of the output. Drive CHG low to
terminate charging.
11, 12
PGND
Power ground. Connect to the ground plane.
14
TEST_GND
Used by TI, should be connected to PGND and ground plane.
Battery voltage monitor input. Connect VBAT to an input supply from 1.6 V to 12 V. Bypass
15
VBAT
I
VBAT to GND with a 10-
µF ceramic capacitor (C1 in Figure 1, as close as possible to the
battery) and a 1-
µF ceramic capacitor (C2 in Figure 1, as close as possible to the IC).
4
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