FMM5804X

17.5-31.5GHz Power Amplifier MMIC

4

For further information please contact:

FUJITSU COMPOUND SEMICONDUCTOR, INC.

2355 Zanker Rd.

San Jose, CA 95131-1138, U.S.A.

Phone: (408) 232-9500

FAX: (408) 428-9111

www.fcsi.fujitsu.com

FUJITSU QUANTUM DEVICES EUROPE, LTD.

Network House

Norreys Drive

Maidenhead, Berkshire SL6 4FJ

Phone:+44 (0)1628 504800

FAX:+44 (0)1628 504888

Fujitsu Limited reserves the right to change products and specifications without notice.

The information does not convey any license under rights of Fujitsu Limited or others.

© 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC.

Printed in U.S.A. FCSI0599M200

CHIP OUTLINE

Unit:

µm

0

0

0

2610

0

VGG1

Chip Size: 2610

±30µm x 1410±30µm

Chip Thickness:70

±20µm

Pad Dimensions: 1. DC 80 x 80

µm

2. RF 120 x 80

µm

VGG2

VGG3

1140

1335

75

1140

1410

RFin

RFout

550

80

80

2530

1150

VGG4

1750

VDD3

2330

VDD2

840

VDD1

240

VDD4

2470

2050

Fujitsu Compound Semiconductor Products contain gallium arsenide

(GaAs) which can be hazardous to the human body and the environment.

For safety, observe the following procedures:

CAUTION

• Do not ingest.

• Do not alter the form of this product into a gas, powder, or liquid

through burning, crushing, or chemical processing as these by-products

are dangerous to the human body if inhaled, ingested, or swallowed.

• Observe government laws and company regulations when discarding this

product. This product must be discarded in accordance with methods

specified by applicable hazardous waste procedures.