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TA33-5R2F25RD Datasheet(PDF) 1 Page - Vishay Siliconix

No. de Pieza. TA33-5R2F25RD
Descripción  Dual Value, Chip Resistor Center Tap
Descarga  3 Pages
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Fabricante  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
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TA33-5R2F25RD Datasheet(HTML) 1 Page - Vishay Siliconix

   
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Document Number: 60066
Revision 24-Feb-06
www.vishay.com
150
TA 33
Vishay Sfernice
VISHAY THIN FILM • FRANCE +33.4.93.37.28.24 FAX: +33.4.93.37.27.31 • GERMANY +49.9287.710 FAX: +49 9287.70435 • ISRAEL +972.3.557.0945 FAX: +972.3.558.9121
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Dual Value, Chip Resistor Center Tap
Actual Size
SCHEMATIC
These tantalum chips combine excellent stability 0.07 %
(2000 hours, rated power at 70 °C) with great power han-
dling capacity. Two bonding pads per termination allow
greater flexibility in hybrid layout design.
RT
R1
R2
RT = R1 + R2 with R1 = R2 Standard
FEATURES
• Center tap feature
• Resistor material: self - passivating
Tantalum Nitride
• Silicon substrate for good power dissipation
• Low cost
TEST
SPECIFICATIONS
CONDITIONS
MATERIAL
TANTALUM NITRIDE
Resistance Range
50 ohms to 500 Kohms
for R
T = R1 + R2
TCR:
Tracking
± 5 ppm/°C
- 55 °C to + 155 °C
Absolute
± 100 ppm/°C (± 50 ppm/°C on Request)
- 55 °C to + 155 °C
Tolerance:
Ratio
1/1 standard
Absolute
± 0.5 %, ± 1 %, ± 2 %
Matching
± 0.5 % Standard
Power Dissipation
250 mW at + 25 °C, 125 mW at + 70 °C, 50 mW at + 125 °C
Stability
± 0.07 % typical, ± 0.1 Max.
2000 hrs. at +70 °C under Pn
Working Voltage
50 Volts DC on R
T
Operating Temperature Range
- 55 °C to + 155 °C
Storage Temperature Range
- 55 °C to + 155 °C
Noise
< - 35 dB typical
MIL-STD-202 Method 308
Thermal EMF
0.01 µV/°C
Shelf Life Stability
100 ppm
1 year at + 25 °C
STANDARD ELECTRICAL SPECIFICATIONS
ABS
TRACKING
TCR
100 ppm/
°C
5 ppm/
°C
ABS
RATIO
TOL
0.5 %
0.5 %
TYPICAL PERFORMANCE
RoHS
COMPLIANT


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