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2021-25 Datasheet(PDF) 1 Page - GHz Technology |
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2021-25 Datasheet(HTML) 1 Page - GHz Technology |
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1 / 1 page GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 2021-25 25 Watts, 24 Volts, Class C Microwave 2000 - 2130 MHz GENERAL DESCRIPTION The 2021-25 is a COMMON BASE transistor capable of providing 25 Watts, Class C output power over the band 2000-2130 MHz. The transistor includes input and output prematching for full Broadband capability. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed package. CASE OUTLINE 55AW, STYLE 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25 C 58 Watts o Maximum Voltage and Current BVces Collector to Emitter Voltage 40 Volts BVebo Emitter to Base Voltage 3.5 Volts Ic Collector Current 3.0 Amps Maximum Temperatures Storage Temperature - 65 to + 200 C o Operating Junction Temperature + 200 C o ELECTRICAL CHARACTERISTICS @ 25 C O SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS Pout Pin Pg ηc VSWR1 Power Out Power Input Power Gain Efficiency Load Mismatch Tolerance F = 2000-2100 MHz Vcc = 24 Volts Pout = 25 Watts 25 7.0 50 5.0 3:1 Watts Watts dB % BVces BVebo Hfe Cob θjc Collector to Base Breakdown Emitter to Base Breakdown Current Gain Output Capacitance* Thermal Resistance Ic = 10 mA Ie = 5 mA Vce = 5V, Ic=1 A Tc = 25 C o 40 3.5 20 120 3.0 Volts Volts pF C/W o * Not measureable due to internal prematch network August 1996 |
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