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1N4006ID Datasheet(PDF) 2 Page - NXP Semiconductors

No. de pieza 1N4006ID
Descripción Electrónicos  Rectifiers
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

1N4006ID Datasheet(HTML) 2 Page - NXP Semiconductors

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1996 Jun 10
2
Philips Semiconductors
Product specification
Rectifiers
1N4001ID to 1N4007ID
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass package
through Implotec
(1) technology.
(1) Implotec is a trademark of Philips.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
Fig.1 Simplified outline (SOD81) and symbol.
handbook, 4 columns
a
k
MAM123
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
1N4001ID
50
V
1N4002ID
100
V
1N4003ID
200
V
1N4004ID
400
V
1N4005ID
600
V
1N4006ID
800
V
1N4007ID
1000
V
VR
continuous reverse voltage
1N4001ID
50
V
1N4002ID
100
V
1N4003ID
200
V
1N4004ID
400
V
1N4005ID
600
V
1N4006ID
800
V
1N4007ID
1000
V
IF(AV)
average forward current
averaged over any 20 ms
period; Tamb =75 °C; see Fig.2
1.00 A
averaged over any 20 ms
period; Tamb = 100 °C; see Fig.2
0.75 A
IFRM
repetitive peak forward current
10
A
IFSM
non-repetitive peak forward current
half sinewave; 60 Hz
20
A
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
−65
+175
°C


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