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CP316V Datasheet(PDF) 1 Page - Central Semiconductor Corp

No. de Pieza. CP316V
Descripción  Small Signal Transistors NPN - High Voltage Transistor Chip
Descarga  2 Pages
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Fabricante  CENTRAL [Central Semiconductor Corp]
Página de inicio  http://www.centralsemi.com
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CP316V Datasheet(HTML) 1 Page - Central Semiconductor Corp

   
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PROCESS
CP316V
Small Signal Transistors
NPN - High Voltage Transistor Chip
PRINCIPAL DEVICE TYPES
CMPT5551
CXT5551
CZT5551
2N5551
Process
EPITAXIAL PLANAR
Die Size
20 x 20 MILS
Die Thickness
7.1 MILS
Base Bonding Pad Area
4.0 x 4.0 MILS
Emitter Bonding Pad Area
4.7 x 4.7 MILS
Top Side Metalization
Al - 30,000Å
Back Side Metalization
Au - 18,000Å
PROCESS DETAILS
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel:
(631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
BACKSIDE COLLECTOR
GEOMETRY
R0 (22-March 2005)
GROSS DIE PER 4 INCH WAFER
29,250


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