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2N2369 Datasheet(PDF) 2 Page - NXP Semiconductors |
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2N2369 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1997 Jun 20 2 Philips Semiconductors Product specification NPN switching transistor 2N2369 FEATURES • Low current (max. 200 mA) • Low voltage (max. 15 V). APPLICATIONS • High-speed switching • VHF amplification. DESCRIPTION NPN switching transistor in a TO-18 metal package. PINNING PIN DESCRIPTION 1 emitter 2 base 3 collector, connected to case Fig.1 Simplified outline (TO-18) and symbol. handbook, halfpage MAM264 1 3 2 3 1 2 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 40 V VCEO collector-emitter voltage open base − 15 V IC collector current (DC) − 200 mA Ptot total power dissipation Tamb ≤ 25 °C − 360 mW hFE DC current gain IC = 10 mA; VCE =1V; Tj =25 °C 40 120 fT transition frequency IC = 10 mA; VCE = 10 V; f = 100 MHz 500 − MHz toff turn-off time ICon = 10 mA; IBon = 3 mA; IBoff = −1.5 mA − 30 ns |
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Descripción similar - 2N2369 |
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