2N6427 datasheet(2/8 Pages) PHILIPS

No. de pieza	2N6427

Descripción Electrónicos	NPN Darlington transistor

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Fabricante Electrónico	PHILIPS [NXP Semiconductors]

Página de inicio	http://www.nxp.com

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2 / 8 page

1997 Jul 04

2

Philips Semiconductors

Product speciﬁcation

NPN Darlington transistor

2N6427

FEATURES

• High current (max. 500 mA)

• Low voltage (max. 30 V)

• High DC current gain (min. 10000).

APPLICATIONS

• General purpose

• High gain amplification.

DESCRIPTION

NPN Darlington transistor in a TO-92; SOT54 plastic

package.

PINNING

DESCRIPTION

1

collector

2

base

3

emitter

Fig.1

Simplified outline (TO-92; SOT54)

and symbol.

handbook, halfpage

1

3

2

MAM252

TR2

2

1

3

TR1

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

40

V

VCES

collector-emitter voltage

VBE =0

−

30

V

IC

collector current

−

500

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

−

625

mW

hFE

DC current gain

IC = 10 mA; VCE = 5 V

10000

100000

fT

transition frequency

IC = 10 mA; VCE = 5 V; f = 100 MHz

125

−

MHz

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