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2PB1219AR Datasheet(PDF) 3 Page - NXP Semiconductors

No. de pieza 2PB1219AR
Descripción Electrónicos  PNP general purpose transistor
Download  8 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

2PB1219AR Datasheet(HTML) 3 Page - NXP Semiconductors

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1999 Apr 12
3
Philips Semiconductors
Product specification
PNP general purpose transistor
2PB1219A
THERMAL CHARACTERISTICS
Note
1. Refer to SOT323; SC70 standard mounting conditions.
CHARACTERISTICS
Tamb =25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
625
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = −20 V
−−100
nA
IE = 0; VCB = −20 V; Tj = 150 °C
−−5
µA
IEBO
emitter cut-off current
IC = 0; VEB = −4V
−−100
nA
hFE
DC current gain
IC = −150 mA; VCE = −10 V; note 1
2PB1219AQ
85
170
2PB1219AR
120
240
2PB1219AS
170
340
hFE
DC current gain
IC = −500 mA; VCE = −10 V; note 1
40
VCEsat
collector-emitter saturation voltage
IC = −300 mA; IB = −30 mA; note 1
−−600
mV
VBEsat
base-emitter saturation voltage
IC = −300 mA; IB = −30 mA; note 1
−−1.5
V
Cc
collector capacitance
IE =ie = 0; VCB = −10 V; f = 1 MHz
15
pF
fT
transition frequency
IC = 50 mA; VCE = −10 V;
f = 100 MHz; note 1
2PB1219AQ
100
MHz
2PB1219AR
120
MHz
2PB1219AS
140
MHz


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