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GS8182S18GD-200 Datasheet(PDF) 9 Page - GSI Technology

No. de pieza GS8182S18GD-200
Descripción Electrónicos  18Mb Burst of 2 DDR SigmaSIO-II SRAM
Download  31 Pages
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Fabricante Electrónico  GSI [GSI Technology]
Página de inicio  http://www.gsitechnology.com
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GS8182S18GD-200 Datasheet(HTML) 9 Page - GSI Technology

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Separate I/O Burst of 2 SigmaSIO-II SRAM Truth Table
A
LD
R/W
Current
Operation
D
D
Q
Q
K
(tn)
K
(tn)
K
(tn)
K
(tn)
K
(tn+1)
K
(tn+1)
K
(tn+1)
K
(tn+1)
X
1
X
Deselect
X
Hi-Z
V
0
1
Read
X
Q0
Q1
V
0
0
Write
D0
D1
Hi-Z
Notes:
1. “1” = input “high”; “0” = input “low”; “V” = input “valid”; “X” = input “don’t care”
2. “—” indicates that the input requirement or output state is determined by the next operation.
3. Q0 and Q1 indicate the first and second pieces of output data transferred during Read operations.
4. D0 and D1 indicate the first and second pieces of input data transferred during Write operations.
5. Qs are tristated for one cycle in response to Deselect and Write commands, one cycle after the command is sampled, except when pre-
ceded by a Read command.
6. CQ is never tristated.
7. Users should not clock in metastable addresses.
GS8182S18D-267/250/200/167
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.08a 8/2005
9/31
© 2003, GSI Technology


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