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GS74108ATP-8I Datasheet(Hoja de datos) 5 Page - GSI Technology

No. de Pieza. GS74108ATP-8I
Descripción  512K x 8 4Mb Asynchronous SRAM
Descarga  13 Pages
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Fabricante  GSI [GSI Technology]
Página de inicio  http://www.gsitechnology.com
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DQ
VT = 1.4 V
50
30pF1
DQ
3.3 V
Output Load 1
Output Load 2
589
434
5pF1
Notes:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted.
3. Output load 2 for tLZ, tHZ, tOLZ and tOHZ
Parameter
Conditions
Input high level
VIH = 2.4 V
Input low level
VIL = 0.4 V
Input rise time
tr = 1 V/ns
Input fall time
tf = 1 V/ns
Input reference level
1.4 V
Output reference level
1.4 V
Output load
Fig. 1& 2
GS74108ATP/J/X
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.07 1/2006
5/13
© 2001, Giga Semiconductor, Inc.
AC Test Conditions
AC Characteristics
Read Cycle
Parameter
Symbol
-8
-10
-12
Unit
Min
Max
Min
Max
Min
Max
Read cycle time
t
8
10
12
ns
Address access time
t
8
10
12
ns
Chip enable access time (CE)
t
8
10
12
ns
Output enable to output valid (OE)
t
3.5
4
5
ns
Output hold from address change
t
3
3
3
ns
Chip enable to output in low Z (CE)
t *
3
3
3
ns
Output enable to output in low Z (OE)
t *
0
0
0
ns
Chip disable to output in High Z (CE)
t *
4
5
6
ns
Output disable to output in High Z (OE)
t
*
3.5
4
5
ns
* These parameters are sampled and are not 100% tested.
RC
AA
AC
OE
OH
LZ
OLZ
HZ
OHZ




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