Motor de Búsqueda de Datasheet de Componentes Electrónicos
Selected language     Spanish  ▼
Nombre de pieza
         Descripción


H02N60SJ Datasheet(Hoja de datos) 6 Page - Hi-Sincerity Mocroelectronics

No. de Pieza. H02N60SJ
Descripción  N-Channel Power Field Effect Transistor
Descarga  6 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Fabricante  HSMC [Hi-Sincerity Mocroelectronics]
Página de inicio  http://www.hsmc.com.tw
Logo 

   
 6 page
background image
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200504
Issued Date : 2005.05.01
Revised Date : 2005.09.28
Page No. : 6/6
H02N60SI, H02N60SJ, H02N60SE, H02N60SF
HSMC Product Specification
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10
oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Average ramp-up rate (T
L to TP)<3
oC/sec
<3
oC/sec
Preheat
- Temperature Min (Ts
min)
- Temperature Max (Ts
max)
- Time (min to max) (ts)
100
oC
150
oC
60~120 sec
150
oC
200
oC
60~180 sec
Tsmax to T
L
- Ramp-up Rate
<3
oC/sec
<3
oC/sec
Time maintained above:
- Temperature (T
L)
- Time (t
L)
183
oC
60~150 sec
217
oC
60~150 sec
Peak Temperature (T
P)
240
oC +0/-5oC
260
oC +0/-5oC
Time within 5
oC of actual Peak
Temperature (t
P)
10~30 sec
20~40 sec
Ramp-down Rate
<6
oC/sec
<6
oC/sec
Time 25
oC to Peak Temperature
<6 minutes
<8 minutes
3. Flow (wave) soldering (solder dipping)
Products
Peak temperature
Dipping time
Pb devices.
245
oC
±5oC
5sec
±1sec
Pb-Free devices.
260
oC +0/-5oC
5sec
±1sec
Figure 1: Temperature profile
tP
tL
Ramp-down
Ramp-up
Tsmax
Tsmin
Critical Zone
TL to TP
tS
Preheat
TL
TP
25
t 25oC to Peak
Time




Html Pages

1  2  3  4  5  6 


Datasheet Download



Número de Pieza relacionado

Número de PiezaDescripción de ComponentesHtml ViewFabricante
MRF6P21190HR6RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET 1 2 3 4 5 MoreFreescale Semiconductor, Inc
H01N60N-Channel Power Field Effect Transistor 1 2 3 4 5 Hi-Sincerity Mocroelectronics
2SK591N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 1 2 3 NEC
MTH8N90POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS 1 2 3 4 5 MoreMotorola, Inc
MTD2N20POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE 1 2 3 4 5 MoreMotorola, Inc
MRF18085AThe RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs 1 2 3 4 5 MoreMotorola, Inc
IRF530N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR 1 2 Motorola, Inc
MTH8N40Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS 1 2 3 4 5 Motorola, Inc
2SK784N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 1 2 3 NEC
MW6S010NR1RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs 1 2 3 4 5 MoreFreescale Semiconductor, Inc

Enlace URL

¿ALLDATASHEET es útil para Ud.?  [ DONATE ]  

Todo acerca de Alldatasheet   |   Publicidad   |   Contáctenos   |   Política de Privacidad   |   Favorito   |   Intercambio de Enlaces   |   Lista de Fabricantes
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  , Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp  |   Russian : Alldatasheetru.com
Korean : Alldatasheet.co.kr   |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com  |   Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl