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H03N60E Datasheet(PDF) 3 Page - Hi-Sincerity Mocroelectronics

No. de pieza H03N60E
Descripción Electrónicos  N-Channel Power Field Effect Transistor
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Fabricante Electrónico  HSMC [Hi-Sincerity Mocroelectronics]
Página de inicio  http://www.hsmc.com.tw
Logo HSMC - Hi-Sincerity Mocroelectronics

H03N60E Datasheet(HTML) 3 Page - Hi-Sincerity Mocroelectronics

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200602
Issued Date : 2006.02.01
Revised Date : 2006.02.07
Page No. : 3/5
H03N60E, H03N60F
HSMC Product Specification
Characteristics Curve
On-Region Characteristic
0
1
2
3
4
5
6
7
8
9
10
02
46
8
10
VDS, Drain-Source Voltage (V)
VGS=4V
VGS=5V
VGS=6V
VGS=10V
VGS=8V
Capacitance Characteristics
0
200
400
600
800
1000
0.1
1
10
100
VDS, Deain-Source Voltage (V)
Ciss
Crss
Coss
Typical On-Resistance & Drain Current
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0123
456
ID, Drain Current (A)
VGS=10V
Drain Current Variation with
Gate Voltage and Temperature
0
1
2
3
4
5
6
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
VGS, Gate-Source Voltage (V)
TC= 25
oC
VDS=10 V
Maximum Safe Operating Area
0.1
1
10
10
100
1000
VDS, Drain-Source Voltage (V)
1ms
100ms
10ms
VDS=200V
Gate Charge Waveforms
0
2
4
6
8
10
12
01
23
45
Q, Gate Charge (nC)


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