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HN29V102414 Datasheet(PDF) 4 Page - Renesas Technology Corp |
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HN29V102414 Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 48 page HN29V102414 Series 2 • Erase mode Single sector erase ((2048 + 64) byte unit) • Fast serial read access time: First access time: 50 µs (max) Serial access time: 50 ns (max) • Low power dissipation: I CC1 = 2 mA (typ) (Read) (1-chip operation) I CC1 = 4 mA (typ) (Read) (2-chip operation) I CC2 = 20 mA (max) (Read) (1-chip operation) I CC2 = 40 mA (max) (Read) (2-chip operation) I SB2 = 50 µA (max) (Standby) (1-chip operation) I SB2 = 100 µA (max) (Standby) (2-chip operation) I CC3/ICC4 = 40 mA (max) (Erase/Program) (1-chip operation) I CC3/ICC4 = 80 mA (max) (Erase/Program) (2-chip operation) I SB3 = 20 µA (max) (Deep standby) (1-chip operation) I SB3 = 40 µA (max) (Deep standby) (2-chip operation) • The following architecture is required for data reliability. Error correction: more than 3-bit error correction per each sector read Spare sectors: 1.8% (579 sectors)/chip (min) within usable sectors Ordering Information Type No. Available sector Package HN29V102414T-50 More than 64,226 sectors 12.0 × 18.40 mm2 0.5 mm pitch 48-pin plastic TSOP I (TFP-48DA) |
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