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TPC8013-H Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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TPC8013-H Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page TPC8013-H 2002-03-25 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III) TPC8013-H High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications · Small footprint due to small and thin package · High speed switching · Small gate charge: Qg = 48 nc (typ.) · Low drain-source ON resistance: RDS (ON) = 5.4 mΩ (typ.) · High forward transfer admittance: |Yfs| = 25 S (typ.) · Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) · Enhancement-mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kW) VDGR 30 V Gate-source voltage VGSS ±20 V DC (Note 1) ID 15 Drain current Pulse (Note 1) IDP 60 A Drain power dissipation (t = 10 s) (Note 2a) PD 1.9 W Drain power dissipation (t = 10 s) (Note 2b) PD 1.0 W Single pulse avalanche energy (Note 3) EAS 146 mJ Avalanche current IAR 15 A Repetitive avalanche energy (Note 2a) (Note 4) EAR 0.19 mJ Channel temperature Tch 150 °C Storage temperature range Tstg -55 to 150 °C Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-6J1B Weight: 0.080 g (typ.) Circuit Configuration 8 6 1 2 3 7 5 4 |
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