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AM29DL640G70PCEN Datasheet(PDF) 48 Page - Advanced Micro Devices |
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AM29DL640G70PCEN Datasheet(HTML) 48 Page - Advanced Micro Devices |
48 / 52 page 48 Am29DL640G June 7, 2002 PR E L I M I N A R Y ERASE AND PROGRAMMING PERFORMANCE Notes: 1. Typical program and erase times assume the following conditions: 25 °C, 3.0 V V CC, 1,000,000 cycles. Additionally, programming typicals assume checkerboard pattern. 2. Under worst case conditions of 90 °C, V CC = 2.7 V, 1,000,000 cycles. 3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum program times listed. 4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 12 for further information on command definitions. 6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles. LATCHUP CHARACTERISTICS Note: Includes all pins except V CC. Test conditions: VCC = 3.0 V, one pin at a time. TSOP PIN CAPACITANCE Notes: 1. Sampled, not 100% tested. 2. Test conditions T A = 25°C, f = 1.0 MHz. DATA RETENTION Parameter Typ (Note 1) Max (Note 2) Unit Comments Sector Erase Time 0.4 5 sec Excludes 00h programming prior to erasure (Note 4) Chip Erase Time 56 sec Byte Program Time 5 150 µs Excludes system level overhead (Note 5) Accelerated Byte/Word Program Time 4 120 µs Word Program Time 7 210 µs Chip Program Time (Note 3) Byte Mode 42 126 sec Word Mode 28 84 Description Min Max Input voltage with respect to V SS on all pins except I/O pins (including A9, OE#, and RESET#) –1.0 V 12.5 V Input voltage with respect to V SS on all I/O pins –1.0 V V CC + 1.0 V V CC Current –100 mA +100 mA Parameter Symbol Parameter Description Test Setup Typ Max Unit C IN Input Capacitance V IN = 0 6 7.5 pF C OUT Output Capacitance V OUT = 0 8.5 12 pF C IN2 Control Pin Capacitance V IN = 0 7.5 9 pF Parameter Description Test Conditions Min Unit Minimum Pattern Data Retention Time 150 °C10 Years 125 °C20 Years |
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