BC338 datasheet(1/4 Pages) WEITRON

No. de pieza	BC338

Descripción Electrónicos	NPN General Purpose Transistor

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BC337

BC338

BC337/BC338

TO-92

2

1

3

1

800

50

30

45

25

5.0

625

Collector-Emitter Breakdown Voltage

IC=10mA, IB=0

Collector-Base Breakdown Voltage

IC=100µA, IE=0

Emitter-Base Breakdown Voltage

IC=10µA, IC=0

Unit

Max

Typ

Min

Symbol

V

Vdc

V

mA

mW/°C

°C

-55 to +150

Operating Junction Temperature Range

Storage Junction Temperature Range

PD

V(BR)CBO

V(BR)CEO

V(BR)EBO

-

50

30

45

25

5.0

COLLECTOR

BASE

EMITTER

1/3

30-Jun-06

Lead(Pb)-Free

P b

Collector Current Continuous

Rating

Symbol

lC

Tstg

TJ

NPN General Purpose Transistor

VEBO

VCBO

VCEO

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

Maximum Ratings(TA=25°C unless otherwise noted)

Total Device Dissipation

Alumina Substrate,TA=25°C

BC337

BC338

BC337

BC338

BC337

BC338

ELECTRICAL CHARACTERISTICS

Characteristics

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