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SI4416DY-T1 Datasheet(PDF) 1 Page - Vishay Siliconix

No. de pieza SI4416DY-T1
Descripción Electrónicos  N-Channel 30-V (D-S) MOSFET
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Fabricante Electrónico  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
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SI4416DY-T1 Datasheet(HTML) 1 Page - Vishay Siliconix

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FEATURES
D TrenchFETr Power MOSFET
Si4416DY
Vishay Siliconix
Document Number: 72266
S-31062—Rev. E, 26-May-03
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
30
0.018 @ VGS = 10 V
9.0
30
0.028 @ VGS = 4.5 V
7.3
SD
S
D
SD
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
G
S
N-Channel
MOSFET
D
Ordering Information: Si4416DY
Si4416DY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
"20
V
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
ID
9.0
6.9
Continuous Drain Current (TJ = 150_C)a
TA = 70_C
ID
7.5
5.6
A
Pulsed Drain Current (10
ms Pulse Width)
IDM
50
A
Continuous Source Current (Diode Conduction)a
IS
2.1
1.2
Maximum Power Dissipationa
TA = 25_C
PD
2.5
1.4
W
Maximum Power Dissipationa
TA = 70_C
PD
1.6
0.9
W
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typ
Max
Unit
Mi
J
ti
t A bi
ta
t
v 10 sec
R
40
50
Maximum Junction-to-Ambienta
Steady-State
RthJA
72
90
_C/W
Maximum Junction-to-Foot (Drain)
Steady-State
RthJF
16
20
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.


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