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74HCT1G00GW Datasheet(PDF) 4 Page - NXP Semiconductors |
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74HCT1G00GW Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 16 page 2002 May 15 4 Philips Semiconductors Product specification 2-input NAND gate 74HC1G00; 74HCT1G00 RECOMMENDED OPERATING CONDITIONS LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V); see note 1 and 2. Notes 1. Stresses beyond those listed may cause permanent damage to the device. These are stress rating only and functional operation of the device at these or any other conditions beyond those under ‘recommended operating conditions’ is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. 2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. 3. Above 55 °C the value of P D derates linearly with 2.5 mW/K. SYMBOL PARAMETER CONDITIONS 74HC1G 74HCT1G UNIT MIN. TYP. MAX. MIN. TYP. MAX. VCC supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V VI input voltage 0 − VCC 0 − VCC V VO output voltage 0 − VCC 0 − VCC V Tamb operating ambient temperature see DC and AC characteristics per device −40 +25 +125 −40 +25 +125 °C tr,tf input rise and fall times VCC = 2.0 V −− 1000 −−− ns VCC = 4.5 V −− 500 −− 500 ns VCC = 6.0 V −− 400 −−− ns SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCC supply voltage −0.5 +7.0 V IIK input diode current VI <−0.5 V or VI > VCC + 0.5 V −±20 mA IOK output diode current VO <−0.5 V or VO > VCC + 0.5 V −±20 mA IO output source or sink current −0.5 V < VO < VCC + 0.5 V −±12.5 mA ICC VCC or GND current −±25 mA Tstg storage temperature −65 +150 °C PD power dissipation per package for temperature range from −40 to +125 °C; note 3 − 200 mW |
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