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BUK9523-75A Datasheet(PDF) 5 Page - NXP Semiconductors |
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BUK9523-75A Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 15 page Philips Semiconductors BUK9523-75A; BUK9623-75A TrenchMOS™ logic level FET Product specification Rev. 01 — 10 October 2000 5 of 15 9397 750 07582 © Philips Electronics N.V. 2000. All rights reserved. 8. Characteristics Table 5: Characteristics Tj =25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 0.25 mA; VGS =0V Tj =25 °C75 −− V Tj = −55 °C70 −− V VGS(th) gate-source threshold voltage ID = 1 mA; VDS =VGS; Figure 9 Tj =25 °C 1 1.5 2 V Tj = 175 °C 0.5 −− V Tj = −55 °C −− 2.3 V IDSS drain-source leakage current VDS = 75 V; VGS =0V Tj =25 °C − 0.05 10 µA Tj = 175 °C −− 500 µA IGSS gate-source leakage current VGS = ±10 V; VDS =0V − 2 100 nA RDSon drain-source on-state resistance VGS =5V; ID =25A; Figure 7 and 8 Tj =25 °C − 18 23 m Ω Tj = 175 °C −− 49 m Ω VGS = 4.5 V; ID =25A; −− 26 m Ω Tj =25 °C VGS =10V; ID =25A; Tj =25 °C − 17 22 m Ω Dynamic characteristics Ciss input capacitance VGS =0V; VDS =25V; f = 1 MHz; Figure 12 − 2340 3120 pF Coss output capacitance − 319 383 pF Crss reverse transfer capacitance − 215 295 pF td(on) turn-on delay time VDD = 30 V; RL = 1.2 Ω; VGS =5V; RG =10 Ω; − 24 − ns tr rise time − 141 − ns td(off) turn-off delay time − 142 − ns tf fall time − 108 − ns Ld internal drain inductance from drain lead 6mm from package to centre of die − 4.5 − nH from contact screw on mounting base to centre of die SOT78 − 3.5 − nH from upper edge of drain mounting base to centre of die SOT404 − 2.5 − nH Ls internal source inductance from source lead to source bond pad − 7.5 − nH |
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