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TPCF8303 Datasheet(PDF) 2 Page - Toshiba Semiconductor

No. de pieza TPCF8303
Descripción Electrónicos  TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
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TPCF8303 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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TPCF8303
2003-07-16
2
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Single-device operation
(Note 3a)
Rth (ch-a) (1)
92.6
Thermal resistance,
channel to ambient
(t
= 5 s)
(Note 2a) Single-device value at
dual operation (Note 3b)
Rth (ch-a) (2)
111.6
°C/W
Single-device operation
(Note 3a)
Rth (ch-a) (1)
235.8
Thermal resistance,
channel to ambient
(t
= 5 s)
(Note 2b) Single-device value at
dual operation (Note 3b)
Rth (ch-a) (2)
378.8
°C/W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
Note 3: a) The power dissipation and thermal resistance values are shown for a single device
(During single-device operation, power is only applied to one device.).
b) The power dissipation and thermal resistance values are shown for a single device
(During dual operation, power is evenly applied to both devices.).
Note 4: VDD = -16 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = -1.5 A
Note 5: Repetitive rating; Pulse width limited by Max. Channel temperature.
Note 6: Black round marking “●” locates on the left lower side of parts number marking “F5C” indicates terminal
No. 1.
FR-4
25.4
× 25.4 × 0.8
(Unit: mm)
(b)
FR-4
25.4
× 25.4 × 0.8
(Unit: mm)


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