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UTC8050S Datasheet(PDF) 1 Page - Unisonic Technologies

No. de Pieza. UTC8050S
Descripción  LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR
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Fabricante  UTC [Unisonic Technologies]
Página de inicio  http://www.utc-ic.com
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UTC8050S Datasheet(HTML) 1 Page - Unisonic Technologies

   
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UTC 8050S
NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R201-011,A
LOW VOLTAGE HIGH CURRENT
SMALL SIGNAL NPN
TRANSISTOR
DESCRIPTION
The UTC8050S is a low voltage high current small signal
NPN transistor, designed for Class B push-pull audio
amplifier and general purpose applications.
FEATURES
*Collector current up to 700mA
*Collector-Emitter voltage up to 20 V
*Complementary to UTC 8550S
TO-92
1
1: EMITTER 2: COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
5
V
Collector Dissipation(Ta=25℃)
Pc
1
W
Collector Current
Ic
700
mA
Junction Temperature
Tj
150
°C
Storage Temperature
TSTG
-65 ~ +150
°C
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
BVCBO
Ic=100
µA,IE=0
30
V
Collector-Emitter Breakdown Voltage
BVCEO
Ic=1mA,IB=0
20
V
Emitter-Base Breakdown Voltage
BVEBO
IE=100
µA,Ic=0
5
V
Collector Cut-Off Current
ICBO
VCB=30V,IE=0
1
uA
Emitter Cut-Off Current
IEBO
VEB=5V,Ic=0
100
nA
DC Current Gain(note)
hFE1
hFE2
hFE3
VCE=1V,Ic=1mA
VCE=1V,Ic=150 mA
VCE=1V,Ic=500mA
100
120
40
110
400
Collector-Emitter Saturation Voltage
VCE(sat)
Ic=500mA,IB=50mA
0.5
V
Base-Emitter Saturation Voltage
VBE(sat)
Ic=500mA,IB=50mA
1.2
V
Base-Emitter Saturation Voltage
VBE
VCE=1V,Ic=10mA
1.0
V
Current Gain Bandwidth Product
fT
VCE=10V,Ic=50mA
100
MHz
Output Capacitance
Cob
VCB=10V,IE=0
f=1MHz
9.0
pF


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