*RoHS Directive 2002/95/EC Jan 27 2003 including Annex

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

CD214B-R350~R31000 Glass Passivated Rectifiers

Features

■

Lead free as standard

■

RoHS compliant*

■

Glass passivated chip

■

Low reverse leakage current

■

Low forward voltage drop

■

High current capability

General Information

Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)

Thermal Characteristics (@ TA = 25 °C Unless Otherwise Noted)

Notes:

1 See Forward Derating Curve.

2 Measured @ 1.0 MHz and applied reverse voltage of 4.0 VDC.

3 Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 ˝ x 0.2 ˝ (5.0 mm x 5.0 mm) copper pad areas.

The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop

increasingly smaller electronic components. Bourns offers Glass Passivated Rectifiers for rectification applications, in compact chip

DO-214AA (SMB) size format, which offer PCB real estate savings and are considerably smaller than most competitive parts. The Glass

Passivated Rectifier Diodes offer a forward current of 3.0 A with a choice of repetitive peak reverse voltage of 50 V up to 1000 V.

minimizes roll away.

Parameter

Symbol

CD214B-R350~R31000

Unit

Operating Temperature Range

-65 to +175

°C

Storage Temperature Range

-65 to +175

°C

Parameter

Symbol

CD214B-

Unit

R350

R3100

R3200

R3400

R3600

R3800

R31000

Maximum Repetitive

Peak Reverse Voltage

VRRM

50

100

200

400

600

800

1000

V

Maximum RMS Voltage

VRMS

35

70

140

280

420

560

700

V

Maximum DC

Blocking Voltage

VDC

50

100

200

400

600

800

1000

V

Max. Average Forward

I(AV)

3.0

A

DC Reverse Current @

Rated DC Blocking Voltage

(@TJ = 25 °C)

IR

5.0

µA

DC Reverse Current @

Rated DC Blocking Voltage

(@TJ = 125 °C)

IR

50

µA

CJ

40

pF

Maximum Instantaneous

Forward Voltage @ 1 A

VF

1.0

V

RθJL

13

°C/W

Peak forward surge current

8.3 ms single half sine-wave

superimposed on rated load

(JEDEC Method)

IFSM

115

A