2SJ680 datasheet(5/5 Pages) TOSHIBA

No. de pieza	2SJ680

Descripción Electrónicos	Field Effect Transistor Silicon P-Channel MOS Type (?-MOS V)

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Fabricante Electrónico	TOSHIBA [Toshiba Semiconductor]

Página de inicio	http://www.semicon.toshiba.co.jp/eng

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2SJ680

2004-12-24

5

Pulse width tw (S)

rth – tw

Drain-source voltage VDS (V)

Safe operating area

0.001

10

µ

100

µ

1 m

10 m

100 m

1

10

100

0.003

0.005

0.01

0.03

0.05

0.1

0.3

0.5

1

3

T

PDM

t

Duty

= t/T

Rth (ch-c) = 6.25°C/W

Duty

= 0.5

0.2

0.1

0.05

0.02

0.01

Single pulse

ID max (pulse) *

DC

operation

100

µs*

1 ms*

VDSS max

−0.005

−0.1

−0.3

−1

−3

−10

−30

−100

−300

−0.01

−0.03

−0.05

−0.1

−0.3

−0.5

−1

−3

−5

−10

−30

* Single nonrepetitive pulse

Tc

= 25°C

Curves must be derated

linearly with increase in

temperature.

Channel temperature Tch (°C)

EAS – Tch

0

25

20

40

60

100

80

50

75

100

125

150

−15 V

15 V

Test circuit

Waveform

IAR

BVDSS

VDD

VDS

RG = 25 Ω

VDD = −50 V, L = 25.2 mH

⎟

⎠

⎞

⎜

⎝

⎛

−

⋅

=

VDD

BVDSS

2

I

L

2

1

ΕAS

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2SJ680 Datasheet(PDF) 5 Page - Toshiba Semiconductor

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Número de pieza similar - 2SJ680

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