Motor de Búsqueda de Datasheet de Componentes Electrónicos |
|
STB10NK60ZT4 Datasheet(PDF) 5 Page - STMicroelectronics |
|
STB10NK60ZT4 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 19 page STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z 2 Electrical characteristics 5/19 Table 8. Source drain diode (1) ISD ≤10A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (2) Pulse width limited by safe operating area (3) Limited only by maximum temperature allowed (4) Pulsed: pulse duration = 300µs, duty cycle 1.5% (5) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDMNote 2 Source-drain Current Source-drain Current (pulsed) 10 36 A A VSDNote 4 Forward on Voltage ISD=10A, VGS=0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD=8A, di/dt = 100A/µs, VDD=40 V, Tj=150°C 570 4.3 15 ns µC A |
Número de pieza similar - STB10NK60ZT4 |
|
Descripción similar - STB10NK60ZT4 |
|
|
Enlace URL |
Política de Privacidad |
ALLDATASHEET.ES |
¿ALLDATASHEET es útil para Ud.? [ DONATE ] |
Todo acerca de Alldatasheet | Publicidad | Contáctenos | Política de Privacidad | Intercambio de Enlaces | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |