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TPS28225DRBR Datasheet(PDF) 6 Page - Texas Instruments

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No. de pieza TPS28225DRBR
Descripción Electrónicos  High-Frequency 4-A Sink Synchronous MOSFET Driver
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Fabricante Electrónico  TI [Texas Instruments]
Página de inicio  http://www.ti.com
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TPS28225DRBR Datasheet(HTML) 6 Page - Texas Instruments

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ELECTRICAL CHARACTERISTICS
(1)
TPS28225
SLUS710 – MAY 2006
V
DD = 7.2 V, EN/PG pulled up to VDD by 100-kΩ resistor, TA = TJ = –40°C to 125°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
UNDER VOLTAGE LOCKOUT
Rising threshold
VPWM = 0 V
3.2
3.5
3.8
Falling threshold
VPWM = 0 V
2.7
3.0
V
Hysteresis
0.5
BIAS CURRENTS
IDD(off) Bias supply current
VEN/PG = low, PWM pin floating
350
µA
IDD
Bias supply current
VEN/PG = high, PWM pin floating
500
INPUT (PWM)
VPWM = 5 V
185
IPWM
Input current
µA
VPWM = 0 V
–200
PWM 3-state rising threshold(2)
1.0
V
PWM 3-state falling threshold
VPWM PEAK = 5 V
3.4
3.8
4.0
tHLD_R 3-state shutdown Hold-off time
250
ns
TMIN
PWM minimum pulse to force UGATE pulse
CL = 3 nF at UGATE , VPWM = 5 V
30
ENABLE/POWER GOOD (EN/PG)
Enable high rising threshold
PG FET OFF
1.7
2.1
Enable low falling threshold
PG FET OFF
0.8
1.0
V
Hysteresis
0.35
0.70
Power good output
VDD = 2.5 V
0.2
UPPER GATE DRIVER OUTPUT (UGATE)
Source resistance
500 mA source current
1.0
2.0
Source current (2)
VUGATE-PHASE = 2.5 V
2.0
A
tRU
Rise time
CL = 3 nF
10
ns
Sink resistance
500 mA sink current
1.0
2.0
Sink current (2)
VUGATE-PHASE = 2.5 V
2.0
A
tFU
Fall time
CL = 3 nF
10
ns
LOWER GATE DRIVER OUTPUT (LGATE)
Source resistance
500 mA source current
1.0
2.0
Source current(2)
VLGATE = 2.5 V
2.0
A
tRL
Rise time(2)
CL = 3 nF
10
ns
Sink resistance
500 mA sink current
0.4
1.0
Sink current(2)
VLGATE = 2.5 V
4.0
A
Fall time(2)
CL = 3 nF
5
ns
SWITCHING TIME
tDLU
UGATE turn-off propagation Delay
CL = 3 nF
14
tDLL
LGATE turn-off propagation Delay
CL = 3 nF
14
ns
tDTU
Dead time LGATE turn-off to UGATE turn-on
CL = 3 nF
14
tDTL
Dead time UGATE turn-off to LGATE turn-on
CL = 3 nF
14
BOOTSTRAP DIODE
VF
Forward voltage
Forward bias current 100 mA
1.0
V
THERMAL SHUTDOWN
Rising threshold(2)
150
160
170
Falling threshold(2)
130
140
150
°C
Hysteresis
20
(1)
Typical values for TA = 25°C
(2)
Not tested in production
6
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