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BAP50-04 Datasheet(PDF) 4 Page - NXP Semiconductors

No. de pieza BAP50-04
Descripción Electrónicos  General purpose PIN diode
Download  8 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BAP50-04 Datasheet(HTML) 4 Page - NXP Semiconductors

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1999 May 10
4
Philips Semiconductors
Preliminary specification
General purpose PIN diode
BAP50-04
GRAPHICAL DATA
Fig.2
Forward resistance as a function of the
forward current; typical values.
f = 100 MHz; Tj =25 °C.
handbook, halfpage
103
10
102
1
MGS317
10−2
10−1
110
IF (mA)
r
D
(
Ω)
Fig.3
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj =25 °C.
handbook, halfpage
103
102
MGS318
10−1
110
102
VR (V)
Cd
(fF)
Fig.4
Insertion loss (
|S21|2) of the diode in on-state
as a function of frequency; typical values.
handbook, halfpage
0.5
3
f (GHz)
|S21|
2
(dB)
0
−5
−4
MGS319
−3
−2
−1
1
(1)
(2)
(3)
1.5
2
2.5
(1) IF =10mA.
(2) IF = 1 mA.
(3) IF = 0.5 mA.
Diode inserted in series with a 50
Ω stripline circuit and
biased via the analyzer Tee network.
Tamb =25 °C.
Fig.5
Isolation (
|S21|2) of the diode in off-state as a
function of frequency; typical values.
Diode zero biased and inserted in series with a 50
Ω stripline circuit.
Tamb =25 °C.
handbook, halfpage
0.5
3
f (GHz)
|S21|
2
(dB)
0
−25
−20
MGS320
−15
−10
−5
1
1.5
2
2.5


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