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BAS55 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BAS55 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 7 page 1996 Sep 10 3 Philips Semiconductors Product specification High-speed diode BAS55 ELECTRICAL CHARACTERISTICS Tj =25 °C; unless otherwise specified. Note 1. Tamb =25 °C; device has reached the thermal equilibrium when mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS Note 1. Device mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VF forward voltage see Fig.3; IF = 200 mA; DC value; note 1 − 1.0 V IR reverse current see Fig.5 VR =60V − 100 nA VR =60V; Tj = 150 °C − 100 µA Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 − 2.5 pF trr reverse recovery time when switched from IF = 400 mA to IR = 400 mA; RL = 100 Ω; measured at IR = 40 mA; see Fig.7 − 6ns Vfr forward recovery voltage when switched to IF = 400 mA; tr = 30 ns; see Fig.8 − 2V when switched to IF = 400 mA; tr = 100 ns; see Fig.8 − 1.5 V SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point 330 K/W Rth j-a thermal resistance from junction to ambient note 1 500 K/W |
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