BC807W datasheet(3/8 Pages) PHILIPS

No. de pieza	BC807W

Descripción Electrónicos	PNP general purpose transistor

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Fabricante Electrónico	PHILIPS [NXP Semiconductors]

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1999 May 18

3

Philips Semiconductors

Product speciﬁcation

PNP general purpose transistor

BC807W

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

625

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −20 V

−−100

nA

IE = 0; VCB = −20 V; Tj = 150 °C

−−5

µA

IEBO

emitter cut-off current

IC = 0; VEB = −5V

−−100

nA

hFE

DC current gain

IC = −100 mA; VCE = −1 V; note 1;

see Figs 2, 3 and 4

BC807W

100

600

BC807-16W

100

250

BC807-25W

160

400

BC807-40W

250

600

DC current gain

IC = −500 mA; VCE = −1 V; note 1

40

−

VCEsat

collector-emitter saturation

voltage

IC = −500 mA; IB = −50 mA; note 1

−−700

mV

VBE

base-emitter voltage

IC = −500 mA; VCE = −1 V; note 1

−−1.2

V

Cc

collector capacitance

IE =ie = 0; VCB = −10 V; f = 1 MHz

−

10

pF

fT

transition frequency

IC = −10 mA; VCE = −5 V; f = 100 MHz 80

−

MHz

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