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BCV61B Datasheet(PDF) 2 Page - NXP Semiconductors

No. de pieza BCV61B
Descripción Electrónicos  NPN general purpose double transistor
Download  8 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BCV61B Datasheet(HTML) 2 Page - NXP Semiconductors

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1999 Apr 08
2
Philips Semiconductors
Product specification
NPN general purpose double transistor
BCV61
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 30 V)
• Matched pairs.
APPLICATIONS
• For use in applications where the working point must be
independent of temperature
• Current mirrors.
DESCRIPTION
NPN double transistor in a SOT143B plastic package.
PNP complement: BCV62.
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BCV61
1Mp
BCV61B
1Kp
BCV61A
1Jp
BCV61C
1Lp
PINNING
PIN
DESCRIPTION
1
collector TR2; base TR1 and TR2
2
collector TR1
3
emitter TR1
4
emitter TR2
Fig.1 Simplified outline (SOT143B) and symbol.
handbook, halfpage
4
12
3
MAM293
Top view
21
34
TR1
TR2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage TR1
open emitter
30
V
VCEO
collector-emitter voltage TR1
open base
30
V
VEBS
emitter-base voltage
VCE =0
6V
IC
collector current (DC)
100
mA
ICM
peak collector current
200
mA
IBM
peak base current TR1
200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
−65
+150
°C


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