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BCV61B Datasheet(PDF) 2 Page - NXP Semiconductors |
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BCV61B Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1999 Apr 08 2 Philips Semiconductors Product specification NPN general purpose double transistor BCV61 FEATURES • Low current (max. 100 mA) • Low voltage (max. 30 V) • Matched pairs. APPLICATIONS • For use in applications where the working point must be independent of temperature • Current mirrors. DESCRIPTION NPN double transistor in a SOT143B plastic package. PNP complement: BCV62. MARKING TYPE NUMBER MARKING CODE TYPE NUMBER MARKING CODE BCV61 1Mp BCV61B 1Kp BCV61A 1Jp BCV61C 1Lp PINNING PIN DESCRIPTION 1 collector TR2; base TR1 and TR2 2 collector TR1 3 emitter TR1 4 emitter TR2 Fig.1 Simplified outline (SOT143B) and symbol. handbook, halfpage 4 12 3 MAM293 Top view 21 34 TR1 TR2 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Transistor mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage TR1 open emitter − 30 V VCEO collector-emitter voltage TR1 open base − 30 V VEBS emitter-base voltage VCE =0 − 6V IC collector current (DC) − 100 mA ICM peak collector current − 200 mA IBM peak base current TR1 − 200 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C |
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Descripción similar - BCV61B |
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